Infineon Technologies-IRG4RC10SDTRPBFBTMA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	14 A
Current - Collector Pulsed (Icm):	18 A
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 8A
Power - Max:	38 W
Switching Energy:	310µJ (on), 3.28mJ (off)
Input Type:	Standard
Gate Charge:	15 nC
Td (on/off) @ 25°C:	76ns/815ns
Test Condition:	480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr):	28 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-PAK (TO-252AA)

Infineon Technologies IRG4RC10SDTRPBFBTMA1