Infineon Technologies-IRG4PH50S-EPBF - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	57 A
Current - Collector Pulsed (Icm):	114 A
Vce(on) (Max) @ Vge, Ic:	1.7V @ 15V, 33A
Power - Max:	200 W
Switching Energy:	1.8mJ (on), 19.6mJ (off)
Input Type:	Standard
Gate Charge:	167 nC
Td (on/off) @ 25°C:	32ns/845ns
Test Condition:	960V, 33A, 5Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD

Infineon Technologies IRG4PH50S-EPBF