Infineon Technologies-IRG4PH40UD2-EP - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	41 A
Current - Collector Pulsed (Icm):	82 A
Vce(on) (Max) @ Vge, Ic:	3.1V @ 15V, 21A
Power - Max:	160 W
Switching Energy:	1.95mJ (on), 1.71mJ (off)
Input Type:	Standard
Gate Charge:	100 nC
Td (on/off) @ 25°C:	22ns/100ns
Test Condition:	800V, 21A, 10Ohm, 15V
Reverse Recovery Time (trr):	50 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD

Infineon Technologies IRG4PH40UD2-EP