Infineon Technologies-IRG4P254SPBF - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	250 V
Current - Collector (Ic) (Max):	98 A
Current - Collector Pulsed (Icm):	196 A
Vce(on) (Max) @ Vge, Ic:	1.5V @ 15V, 55A
Power - Max:	200 W
Switching Energy:	380µJ (on), 3.5mJ (off)
Input Type:	Standard
Gate Charge:	200 nC
Td (on/off) @ 25°C:	40ns/270ns
Test Condition:	200V, 55A, 5Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AC

Infineon Technologies IRG4P254SPBF