Infineon Technologies-IRG4BC30FD1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	31 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 17A
Power - Max:	100 W
Switching Energy:	370µJ (on), 1.42mJ (off)
Input Type:	Standard
Gate Charge:	57 nC
Td (on/off) @ 25°C:	22ns/250ns
Test Condition:	480V, 17A, 23Ohm, 15V
Reverse Recovery Time (trr):	46 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

Infineon Technologies IRG4BC30FD1