IRFZ48Z
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Infineon Technologies IRFZ48Z

Manufacturer No:
IRFZ48Z
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFZ48Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 61A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 37A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1720 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):91W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRFZ48Z IRFZ48ZL   IRFZ48ZS   IRFZ44Z   IRFZ46Z   IRFZ48L   IRFZ48R   IRFZ48S  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V 55 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 61A (Tc) 61A (Tc) 61A (Tc) 51A (Tc) 51A (Tc) 50A (Tc) 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 37A, 10V 11mOhm @ 37A, 10V 11mOhm @ 37A, 10V 13.9mOhm @ 31A, 10V 13.6mOhm @ 31A, 10V 18mOhm @ 43A, 10V 18mOhm @ 43A, 10V 18mOhm @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 64 nC @ 10 V 64 nC @ 10 V 43 nC @ 10 V 46 nC @ 10 V 110 nC @ 10 V 110 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1720 pF @ 25 V 1720 pF @ 25 V 1720 pF @ 25 V 1420 pF @ 25 V 1460 pF @ 25 V 2400 pF @ 25 V 2400 pF @ 25 V 2400 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 91W (Tc) 91W (Tc) 91W (Tc) 80W (Tc) 82W (Tc) 3.7W (Ta), 190W (Tc) 190W (Tc) 3.7W (Ta), 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Surface Mount
Supplier Device Package TO-220AB TO-262 D2PAK TO-220AB TO-220AB TO-262-3 TO-220AB D²PAK (TO-263)
Package / Case TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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