IRFZ48NSPBF
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Infineon Technologies IRFZ48NSPBF

Manufacturer No:
IRFZ48NSPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFZ48NSPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 64A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1970 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRFZ48NSPBF IRFZ48SPBF   IRFZ48RSPBF   IRFZ48ZSPBF   IRFZ48VSPBF   IRFZ44NSPBF   IRFZ46NSPBF   IRFZ48NLPBF   IRFZ48NPBF  
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Active Obsolete Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 60 V 60 V 55 V 60 V 55 V 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc) 50A (Tc) 50A (Tc) 61A (Tc) 72A (Tc) 49A (Tc) 53A (Tc) 64A (Tc) 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V - 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 32A, 10V 18mOhm @ 43A, 10V 18mOhm @ 43A, 10V 11mOhm @ 37A, 10V 12mOhm @ 43A, 10V 17.5mOhm @ 25A, 10V 16.5mOhm @ 28A, 10V 14mOhm @ 32A, 10V 14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V 110 nC @ 10 V 110 nC @ 10 V 64 nC @ 10 V 110 nC @ 10 V 63 nC @ 10 V 72 nC @ 10 V 81 nC @ 10 V 81 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V - ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1970 pF @ 25 V 2400 pF @ 25 V 2400 pF @ 25 V 1720 pF @ 25 V 1985 pF @ 25 V 1470 pF @ 25 V 1696 pF @ 25 V 1970 pF @ 25 V 1970 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 3.8W (Ta), 130W (Tc) 3.7W (Ta), 190W (Tc) 190W (Tc) 91W (Tc) - 3.8W (Ta), 94W (Tc) 3.8W (Ta), 107W (Tc) 3.8W (Ta), 130W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D²PAK (TO-263) TO-263 (D²Pak) D2PAK D2PAK D2PAK D2PAK TO-262 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

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