IRFZ48NPBF
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Infineon Technologies IRFZ48NPBF

Manufacturer No:
IRFZ48NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFZ48NPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 64A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1970 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Part Number IRFZ48NPBF IRFZ48SPBF   IRFZ48PBF   IRFZ48RPBF   IRFZ48ZPBF   IRFZ48NSPBF   IRFZ48VPBF   IRFZ44NPBF   IRFZ46NPBF   IRFZ48NLPBF  
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Obsolete Discontinued at Digi-Key Obsolete Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 60 V 60 V 60 V 55 V 55 V 60 V 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc) 50A (Tc) 50A (Tc) 50A (Tc) 61A (Tc) 64A (Tc) 72A (Tc) 49A (Tc) 53A (Tc) 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 32A, 10V 18mOhm @ 43A, 10V 18mOhm @ 43A, 10V 18mOhm @ 43A, 10V 11mOhm @ 37A, 10V 14mOhm @ 32A, 10V 12mOhm @ 43A, 10V 17.5mOhm @ 25A, 10V 16.5mOhm @ 28A, 10V 14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V 110 nC @ 10 V 110 nC @ 10 V 110 nC @ 10 V 64 nC @ 10 V 81 nC @ 10 V 110 nC @ 10 V 63 nC @ 10 V 72 nC @ 10 V 81 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1970 pF @ 25 V 2400 pF @ 25 V 2400 pF @ 25 V 2400 pF @ 25 V 1720 pF @ 25 V 1970 pF @ 25 V 1985 pF @ 25 V 1470 pF @ 25 V 1696 pF @ 25 V 1970 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 130W (Tc) 3.7W (Ta), 190W (Tc) 190W (Tc) 190W (Tc) 91W (Tc) 3.8W (Ta), 130W (Tc) 150W (Tc) 94W (Tc) 107W (Tc) 3.8W (Ta), 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB D²PAK (TO-263) TO-220AB TO-220AB TO-220AB D2PAK TO-220AB TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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