IRFZ44ZS
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Infineon Technologies IRFZ44ZS

Manufacturer No:
IRFZ44ZS
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFZ44ZS Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 51A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13.9mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1420 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRFZ44ZS IRFZ46ZS   IRFZ48ZS   IRFZ44ES   IRFZ44S   IRFZ44VS   IRFZ44VZS   IRFZ44Z   IRFZ44ZL  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 60 V 60 V 60 V 60 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 51A (Tc) 51A (Tc) 61A (Tc) 48A (Tc) 50A (Tc) 55A (Tc) 57A (Tc) 51A (Tc) 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 13.9mOhm @ 31A, 10V 13.6mOhm @ 31A, 10V 11mOhm @ 37A, 10V 23mOhm @ 29A, 10V 28mOhm @ 31A, 10V 16.5mOhm @ 31A, 10V 12mOhm @ 34A, 10V 13.9mOhm @ 31A, 10V 13.9mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 46 nC @ 10 V 64 nC @ 10 V 60 nC @ 10 V 67 nC @ 10 V 67 nC @ 10 V 65 nC @ 10 V 43 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1420 pF @ 25 V 1460 pF @ 25 V 1720 pF @ 25 V 1360 pF @ 25 V 1900 pF @ 25 V 1812 pF @ 25 V 1690 pF @ 25 V 1420 pF @ 25 V 1420 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 80W (Tc) 82W (Tc) 91W (Tc) 110W (Tc) 3.7W (Ta), 150W (Tc) 115W (Tc) 92W (Tc) 80W (Tc) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D²PAK (TO-263) D2PAK D2PAK TO-220AB TO-262
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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