IRFZ44ZL
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Infineon Technologies IRFZ44ZL

Manufacturer No:
IRFZ44ZL
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFZ44ZL Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 51A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13.9mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1420 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IRFZ44ZL IRFZ44ZS   IRFZ46ZL   IRFZ48ZL   IRFZ44EL   IRFZ44L   IRFZ44NL   IRFZ44VZL   IRFZ44Z  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V 60 V 60 V 55 V 60 V 55 V
Current - Continuous Drain (Id) @ 25°C 51A (Tc) 51A (Tc) 51A (Tc) 61A (Tc) 48A (Tc) 50A (Tc) 49A (Tc) 57A (Tc) 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 13.9mOhm @ 31A, 10V 13.9mOhm @ 31A, 10V 13.6mOhm @ 31A, 10V 11mOhm @ 37A, 10V 23mOhm @ 29A, 10V 28mOhm @ 31A, 10V 17.5mOhm @ 25A, 10V 12mOhm @ 34A, 10V 13.9mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 43 nC @ 10 V 46 nC @ 10 V 64 nC @ 10 V 60 nC @ 10 V 67 nC @ 10 V 63 nC @ 10 V 65 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1420 pF @ 25 V 1420 pF @ 25 V 1460 pF @ 25 V 1720 pF @ 25 V 1360 pF @ 25 V 1900 pF @ 25 V 1470 pF @ 25 V 1690 pF @ 25 V 1420 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 80W (Tc) 80W (Tc) 82W (Tc) 91W (Tc) 110W (Tc) 3.7W (Ta), 150W (Tc) 3.8W (Ta), 94W (Tc) 92W (Tc) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-262 D2PAK TO-262 TO-262 TO-262 TO-262-3 TO-262 TO-262 TO-220AB
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

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