IRFZ44VPBF
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Infineon Technologies IRFZ44VPBF

Manufacturer No:
IRFZ44VPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFZ44VPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 55A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16.5mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1812 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Part Number IRFZ44VPBF IRFZ44ZPBF   IRFZ44VZPBF   IRFZ48VPBF   IRFZ44EPBF   IRFZ44NPBF   IRFZ44PBF   IRFZ44RPBF   IRFZ44SPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix
Product Status Active Active Active Obsolete Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 55 V 60 V 60 V 60 V 55 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) 51A (Tc) 57A (Tc) 72A (Tc) 48A (Tc) 49A (Tc) 50A (Tc) 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 16.5mOhm @ 31A, 10V 13.9mOhm @ 31A, 10V 12mOhm @ 34A, 10V 12mOhm @ 43A, 10V 23mOhm @ 29A, 10V 17.5mOhm @ 25A, 10V 28mOhm @ 31A, 10V 28mOhm @ 31A, 10V 28mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 43 nC @ 10 V 65 nC @ 10 V 110 nC @ 10 V 60 nC @ 10 V 63 nC @ 10 V 67 nC @ 10 V 67 nC @ 10 V 67 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1812 pF @ 25 V 1420 pF @ 25 V 1690 pF @ 25 V 1985 pF @ 25 V 1360 pF @ 25 V 1470 pF @ 25 V 1900 pF @ 25 V 1900 pF @ 25 V 1900 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 115W (Tc) 80W (Tc) 92W (Tc) 150W (Tc) 110W (Tc) 94W (Tc) 150W (Tc) 150W (Tc) 3.7W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Surface Mount
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB D²PAK (TO-263)
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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