IRFZ44NLPBF
  • Share:

Infineon Technologies IRFZ44NLPBF

Manufacturer No:
IRFZ44NLPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFZ44NLPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 49A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:17.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1470 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$1.81
351

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFZ44NLPBF IRFZ44NPBF   IRFZ44ZLPBF   IRFZ46NLPBF   IRFZ44NSPBF   IRFZ48NLPBF   IRFZ24NLPBF   IRFZ34NLPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Not For New Designs Active Discontinued at Digi-Key Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V 55 V 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 49A (Tc) 49A (Tc) 51A (Tc) 53A (Tc) 49A (Tc) 64A (Tc) 17A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 17.5mOhm @ 25A, 10V 17.5mOhm @ 25A, 10V 13.9mOhm @ 31A, 10V 16.5mOhm @ 28A, 10V 17.5mOhm @ 25A, 10V 14mOhm @ 32A, 10V 70mOhm @ 10A, 10V 40mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 63 nC @ 10 V 43 nC @ 10 V 72 nC @ 10 V 63 nC @ 10 V 81 nC @ 10 V 20 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1470 pF @ 25 V 1470 pF @ 25 V 1420 pF @ 25 V 1696 pF @ 25 V 1470 pF @ 25 V 1970 pF @ 25 V 370 pF @ 25 V 700 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.8W (Ta), 94W (Tc) 94W (Tc) 80W (Tc) 3.8W (Ta), 107W (Tc) 3.8W (Ta), 94W (Tc) 3.8W (Ta), 130W (Tc) 3.8W (Ta), 45W (Tc) 3.8W (Ta), 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-262 TO-220AB TO-262 TO-262 D2PAK TO-262 TO-262 TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

IRF630
IRF630
Harris Corporation
MOSFET N-CH 200V 9A TO220AB
NTBG045N065SC1
NTBG045N065SC1
onsemi
SILICON CARBIDE MOSFET, NCHANNEL
SI1032R-T1-GE3
SI1032R-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 140MA SC75A
DMN10H700S-13
DMN10H700S-13
Diodes Incorporated
MOSFET N-CH 100V 700MA SOT23
SQJ840EP-T1_GE3
SQJ840EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 30V 30A PPAK SO-8
IRFR9214TRR
IRFR9214TRR
Vishay Siliconix
MOSFET P-CH 250V 2.7A DPAK
NTD70N03R-1G
NTD70N03R-1G
onsemi
MOSFET N-CH 25V 10A/32A IPAK
STW30NF20
STW30NF20
STMicroelectronics
MOSFET N-CH 200V 30A TO247-3
TPCA8051-H(T2L1,VM
TPCA8051-H(T2L1,VM
Toshiba Semiconductor and Storage
MOSFET N-CH 80V 28A 8SOP
SI8467DB-T2-E1
SI8467DB-T2-E1
Vishay Siliconix
MOSFET P-CH 20V 4MICROFOOT
SUD17N25-165-E3
SUD17N25-165-E3
Vishay Siliconix
MOSFET N-CH 250V 17A TO252
SI5855CDC-T1-E3
SI5855CDC-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 3.7A 1206-8

Related Product By Brand

BAT64-06B5003
BAT64-06B5003
Infineon Technologies
SCHOTTKY DIODE
BC858CE6433HTMA1
BC858CE6433HTMA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BCX71JE6433HTMA1
BCX71JE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
IPD25CNE8N G
IPD25CNE8N G
Infineon Technologies
MOSFET N-CH 85V 35A TO252-3
SLB9665TT20FW560XUMA2
SLB9665TT20FW560XUMA2
Infineon Technologies
SECURITY IC'S/AUTHENTICATION IC'
XC2236N16F66LAAKXUMA1
XC2236N16F66LAAKXUMA1
Infineon Technologies
IC MCU 16/32B 128KB FLASH 64LQFP
PEB2255H-V13
PEB2255H-V13
Infineon Technologies
IC INTERFACE SPECIALIZED 80MQFP
IR3621MPBF
IR3621MPBF
Infineon Technologies
IC REG CTRLR BUCK 32MLPQ
MB90223PF-GT-313-BND
MB90223PF-GT-313-BND
Infineon Technologies
IC MCU 16BIT 64KB MROM 120PQFP
S25FL256SAGBHA203
S25FL256SAGBHA203
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA
S29GL512S10FAI023
S29GL512S10FAI023
Infineon Technologies
IC FLASH 512MBIT PARALLEL 64BGA
CY7C1518UV18-300BZXC
CY7C1518UV18-300BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA