IRFZ44EPBF
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Infineon Technologies IRFZ44EPBF

Manufacturer No:
IRFZ44EPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFZ44EPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 48A TO220AB
Delivery:
Payment:
iso14001
iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:23mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1360 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Part Number IRFZ44EPBF IRFZ44NPBF   IRFZ44ZPBF   IRFZ44VPBF   IRFZ44SPBF   IRFZ44PBF   IRFZ44RPBF   IRFZ44ESPBF   IRFZ34EPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 55 V 55 V 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 49A (Tc) 51A (Tc) 55A (Tc) 50A (Tc) 50A (Tc) 50A (Tc) 48A (Tc) 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 29A, 10V 17.5mOhm @ 25A, 10V 13.9mOhm @ 31A, 10V 16.5mOhm @ 31A, 10V 28mOhm @ 31A, 10V 28mOhm @ 31A, 10V 28mOhm @ 31A, 10V 23mOhm @ 29A, 10V 42mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 63 nC @ 10 V 43 nC @ 10 V 67 nC @ 10 V 67 nC @ 10 V 67 nC @ 10 V 67 nC @ 10 V 60 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1360 pF @ 25 V 1470 pF @ 25 V 1420 pF @ 25 V 1812 pF @ 25 V 1900 pF @ 25 V 1900 pF @ 25 V 1900 pF @ 25 V 1360 pF @ 25 V 680 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 110W (Tc) 94W (Tc) 80W (Tc) 115W (Tc) 3.7W (Ta), 150W (Tc) 150W (Tc) 150W (Tc) 110W (Tc) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Surface Mount Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB D²PAK (TO-263) TO-220AB TO-220AB D2PAK TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3

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