IRFZ44E
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Infineon Technologies IRFZ44E

Manufacturer No:
IRFZ44E
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFZ44E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 48A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:23mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1360 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRFZ44E IRFZ44ES   IRFZ44S   IRFZ44EL   IRFZ44L   IRFZ44R   IRFZ44Z   IRFZ34E  
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 55 V 60 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 48A (Tc) 50A (Tc) 48A (Tc) 50A (Tc) 50A (Tc) 51A (Tc) 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 29A, 10V 23mOhm @ 29A, 10V 28mOhm @ 31A, 10V 23mOhm @ 29A, 10V 28mOhm @ 31A, 10V 28mOhm @ 31A, 10V 13.9mOhm @ 31A, 10V 42mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V 67 nC @ 10 V 60 nC @ 10 V 67 nC @ 10 V 67 nC @ 10 V 43 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1360 pF @ 25 V 1360 pF @ 25 V 1900 pF @ 25 V 1360 pF @ 25 V 1900 pF @ 25 V 1900 pF @ 25 V 1420 pF @ 25 V 680 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 3.7W (Ta), 150W (Tc) 110W (Tc) 3.7W (Ta), 150W (Tc) 150W (Tc) 80W (Tc) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB D2PAK D²PAK (TO-263) TO-262 TO-262-3 TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-220-3 TO-220-3

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