IRFZ34NPBF
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Infineon Technologies IRFZ34NPBF

Manufacturer No:
IRFZ34NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFZ34NPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 29A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRFZ34NPBF IRFZ44NPBF   IRFZ34PBF   IRFZ34SPBF   IRFZ34NSPBF   IRFZ24NPBF   IRFZ34EPBF   IRFZ34NLPBF  
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Discontinued at Digi-Key Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 60 V 60 V 55 V 55 V 60 V 55 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 49A (Tc) 30A (Tc) 30A (Tc) 29A (Tc) 17A (Tc) 28A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 16A, 10V 17.5mOhm @ 25A, 10V 50mOhm @ 18A, 10V 50mOhm @ 18A, 10V 40mOhm @ 16A, 10V 70mOhm @ 10A, 10V 42mOhm @ 17A, 10V 40mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 63 nC @ 10 V 46 nC @ 10 V 46 nC @ 10 V 34 nC @ 10 V 20 nC @ 10 V 30 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V 1470 pF @ 25 V 1200 pF @ 25 V 1200 pF @ 25 V 700 pF @ 25 V 370 pF @ 25 V 680 pF @ 25 V 700 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 68W (Tc) 94W (Tc) 88W (Tc) 3.7W (Ta), 88W (Tc) 3.8W (Ta), 68W (Tc) 45W (Tc) 68W (Tc) 3.8W (Ta), 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB D²PAK (TO-263) D2PAK TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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