IRFU9024N
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Infineon Technologies IRFU9024N

Manufacturer No:
IRFU9024N
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFU9024N Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 55V 11A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251AA)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IRFU9024N IRFU9014N   IRFU9024  
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 5.1A (Tc) 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 6.6A, 10V 500mOhm @ 3.1A, 10V 280mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 12 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 270 pF @ 25 V 570 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 38W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package IPAK (TO-251AA) IPAK (TO-251AA) TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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