IRFU9014N
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Infineon Technologies IRFU9014N

Manufacturer No:
IRFU9014N
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFU9014N Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 5.1A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 25W (Tc)
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251AA)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IRFU9014N IRFU9024N   IRFU9014  
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 55 V 60 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc) 11A (Tc) 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 3.1A, 10V 175mOhm @ 6.6A, 10V 500mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 19 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 25 V 350 pF @ 25 V 270 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc) 38W (Tc) 2.5W (Ta), 25W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package IPAK (TO-251AA) IPAK (TO-251AA) TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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