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| Part Number | IRFU5410PBF | IRFU3410PBF |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active |
| FET Type | P-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 205mOhm @ 7.8A, 10V | 39mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V | 56 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V | 1690 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 66W (Tc) | 3W (Ta), 110W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | IPAK (TO-251AA) | IPAK (TO-251AA) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
