IRFU5305PBF
  • Share:

Infineon Technologies IRFU5305PBF

Manufacturer No:
IRFU5305PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFU5305PBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 55V 31A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251AA)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

$1.22
29

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFU5305PBF IRFU5505PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Last Time Buy
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 16A, 10V 110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V 650 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 57W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package IPAK (TO-251AA) IPAK (TO-251AA)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

SIHP23N60E-BE3
SIHP23N60E-BE3
Vishay Siliconix
N-CHANNEL 600V
TP2540N3-G
TP2540N3-G
Microchip Technology
MOSFET P-CH 400V 86MA TO92-3
IXFN110N60P3
IXFN110N60P3
IXYS
MOSFET N-CH 600V 90A SOT227B
IPB100N04S4H2ATMA1
IPB100N04S4H2ATMA1
Infineon Technologies
MOSFET N-CH 40V 100A TO263-3
SI8466EDB-T2-E1
SI8466EDB-T2-E1
Vishay Siliconix
MOSFET N-CH 8V 4MICROFOOT
SI7858ADP-T1-GE3
SI7858ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 12V 20A PPAK SO-8
IXFA26N30X3
IXFA26N30X3
IXYS
MOSFET N-CH 300V 26A TO263AA
PHB45NQ10T,118
PHB45NQ10T,118
Nexperia USA Inc.
MOSFET N-CH 100V 47A D2PAK
IRF740AS
IRF740AS
Vishay Siliconix
MOSFET N-CH 400V 10A D2PAK
SUD40N02-08-E3
SUD40N02-08-E3
Vishay Siliconix
MOSFET N-CH 20V 40A TO252
SQ1420EEH-T1-GE3
SQ1420EEH-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 1.6A SC70-6
R6524KNXC7G
R6524KNXC7G
Rohm Semiconductor
650V 24A TO-220FM, HIGH-SPEED SW

Related Product By Brand

ESD113B102ELSE6327XTSA1
ESD113B102ELSE6327XTSA1
Infineon Technologies
TVS DIODE 3.6VWM 8VC TSSLP-2-4
IPS80R2K4P7AKMA1
IPS80R2K4P7AKMA1
Infineon Technologies
MOSFET N-CH 800V 2.5A TO251-3
64-4051
64-4051
Infineon Technologies
MOSFET N-CH 55V 16A DPAK
IRFHS8342TR2PBF
IRFHS8342TR2PBF
Infineon Technologies
MOSFET N-CH 30V 8.8A PQFN
SAE800G GEG
SAE800G GEG
Infineon Technologies
IC AUDIO TONE PROCESSOR DSO-8
PEB2075PV1.3-IDEC
PEB2075PV1.3-IDEC
Infineon Technologies
ISDN D-CHANNEL EXCH. CONTROLLER
BSP752RNUMA1
BSP752RNUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8
CY8C4024LQI-S402T
CY8C4024LQI-S402T
Infineon Technologies
IC MCU 32BIT 16KB FLASH 32QFN
MB90022PF-GS-344
MB90022PF-GS-344
Infineon Technologies
IC MCU 16BIT 100QFP
CY7C433-10AXC
CY7C433-10AXC
Infineon Technologies
IC ASYNC FIFO MEM 4KX9 32-TQFP
S25FL128SAGMFIR00
S25FL128SAGMFIR00
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
CY7C1312KV18-300BZXCT
CY7C1312KV18-300BZXCT
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA