IRFU4105PBF
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Infineon Technologies IRFU4105PBF

Manufacturer No:
IRFU4105PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFU4105PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 27A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:45mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251AA)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IRFU4105PBF IRFU4105ZPBF   IRFU4104PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 40 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc) 30A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 16A, 10V 24.5mOhm @ 18A, 10V 5.5mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 27 nC @ 10 V 89 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V 740 pF @ 25 V 2950 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 68W (Tc) 48W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package IPAK (TO-251AA) IPAK (TO-251AA) IPAK (TO-251AA)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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