IRFU3806PBF
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Infineon Technologies IRFU3806PBF

Manufacturer No:
IRFU3806PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFU3806PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 43A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251AA)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IRFU3806PBF IRFU3706PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 20 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 2.8V, 10V
Rds On (Max) @ Id, Vgs 15.8mOhm @ 25A, 10V 9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 50µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 35 nC @ 4.5 V
Vgs (Max) ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 50 V 2410 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 71W (Tc) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package IPAK (TO-251AA) IPAK (TO-251AA)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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