IRFU3711PBF
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Infineon Technologies IRFU3711PBF

Manufacturer No:
IRFU3711PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFU3711PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 100A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2980 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251AA)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IRFU3711PBF IRFU3711ZPBF   IRFU3911PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 93A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 10V 5.7mOhm @ 15A, 10V 115mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.45V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 4.5 V 27 nC @ 4.5 V 32 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2980 pF @ 10 V 2160 pF @ 10 V 740 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta), 120W (Tc) 79W (Tc) 56W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package IPAK (TO-251AA) IPAK (TO-251AA) IPAK (TO-251AA)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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