IRFU18N15D
  • Share:

Infineon Technologies IRFU18N15D

Manufacturer No:
IRFU18N15D
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFU18N15D Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 18A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251AA)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

-
25

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFU18N15D IRFU13N15D  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 11A, 10V 180mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V 620 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 86W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package IPAK (TO-251AA) IPAK (TO-251AA)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

IXFH22N60P3
IXFH22N60P3
IXYS
MOSFET N-CH 600V 22A TO247AD
IPW60R125C6FKSA1
IPW60R125C6FKSA1
Infineon Technologies
MOSFET N-CH 600V 30A TO247-3
TSM7ND65CI
TSM7ND65CI
Taiwan Semiconductor Corporation
MOSFET N-CH 650V 7A ITO220
FDMS86300DC
FDMS86300DC
onsemi
MOSFET N-CH 80V 24A/76A DLCOOL56
TK290A65Y,S4X
TK290A65Y,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 11.5A TO220SIS
SPW12N50C3IN
SPW12N50C3IN
Infineon Technologies
N-CHANNEL POWER MOSFET
RM5N800IP
RM5N800IP
Rectron USA
MOSFET N-CHANNEL 800V 5A TO251
IXTH26N60P
IXTH26N60P
IXYS
MOSFET N-CH 600V 26A TO247
IRLU2703
IRLU2703
Infineon Technologies
MOSFET N-CH 30V 23A I-PAK
IRF1010ZL
IRF1010ZL
Infineon Technologies
MOSFET N-CH 55V 75A TO262
SIA426DJ-T1-GE3
SIA426DJ-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 4.5A PPAK SC70-6
TSM3N90CH C5G
TSM3N90CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CH 900V 2.5A TO251

Related Product By Brand

BAR6302LE6433XT
BAR6302LE6433XT
Infineon Technologies
RF DIODE PIN 50V 250MW TSLP-2
IRF1405STRLPBF
IRF1405STRLPBF
Infineon Technologies
MOSFET N-CH 55V 131A D2PAK
IRFI530N
IRFI530N
Infineon Technologies
MOSFET N-CH 100V 12A TO220AB FP
XMC4108Q48K64BAXUMA1
XMC4108Q48K64BAXUMA1
Infineon Technologies
IC MCU 32BIT 64KB FLASH 48VQFN
IRU3008CW
IRU3008CW
Infineon Technologies
IC REG 24SOIC
IPW60R099P7
IPW60R099P7
Infineon Technologies
600V, 0.099OHM, N-CHANNEL MOSFET
CY9AF141LBPMC1-G-JNE2
CY9AF141LBPMC1-G-JNE2
Infineon Technologies
IC MCU 32BIT 64KB FLASH 64LQFP
MB90587CAPF-G-129-BND
MB90587CAPF-G-129-BND
Infineon Technologies
IC MCU 16BIT 64KB MROM 100QFP
MB89635RPF-G-1134-BND
MB89635RPF-G-1134-BND
Infineon Technologies
IC MCU 8BIT 16KB MROM 64QFP
CY9AF131MPMC-G-SNE2
CY9AF131MPMC-G-SNE2
Infineon Technologies
IC MCU 32BIT 64KB FLASH 80LQFP
S70FS01GSAGMFV010
S70FS01GSAGMFV010
Infineon Technologies
IC FLASH 1GBIT SPI/QUAD 16SOIC
CY7C25652KV18-400BZI
CY7C25652KV18-400BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA