IRFU13N20DPBF
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Infineon Technologies IRFU13N20DPBF

Manufacturer No:
IRFU13N20DPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFU13N20DPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 13A IPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:235mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:830 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251AA)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number IRFU13N20DPBF IRFU15N20DPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 235mOhm @ 8A, 10V 165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 41 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 25 V 910 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package IPAK (TO-251AA) IPAK (TO-251AA)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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