IRFTS9342TRPBF
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Infineon Technologies IRFTS9342TRPBF

Manufacturer No:
IRFTS9342TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRFTS9342TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 5.8A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:40mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:595 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6
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Similar Products

Part Number IRFTS9342TRPBF IRFTS8342TRPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 5.8A, 10V 19mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25µA 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 4.8 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 595 pF @ 25 V 560 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SOT-23-6 SOT-23-6

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