IRFSL7430PBF
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Infineon Technologies IRFSL7430PBF

Manufacturer No:
IRFSL7430PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFSL7430PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 195A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:460 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14240 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRFSL7430PBF IRFSL7437PBF   IRFSL7440PBF   IRFSL7434PBF   IRFSL7730PBF   IRFSL7530PBF   IRFS7430PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Active Not For New Designs Last Time Buy Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 75 V 60 V 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 195A (Tc) 120A (Tc) 195A (Tc) 195A (Tc) 195A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 100A, 10V 1.8mOhm @ 100A, 10V 2.5mOhm @ 100A, 10V 1.6mOhm @ 100A, 10V 2.6mOhm @ 100A, 10V 2mOhm @ 100A, 10V 1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA 3.9V @ 150µA 3.9V @ 100µA 3.9V @ 250µA 3.7V @ 250µA 3.7V @ 250µA 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 460 nC @ 10 V 225 nC @ 10 V 135 nC @ 10 V 324 nC @ 10 V 407 nC @ 10 V 411 nC @ 10 V 460 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 14240 pF @ 25 V 7330 pF @ 25 V 4730 pF @ 25 V 10820 pF @ 25 V 13660 pF @ 25 V 13703 pF @ 25 V 14240 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 375W (Tc) 230W (Tc) 208W (Tc) 294W (Tc) 375W (Tc) 375W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole Through Hole Through Hole Through Hole Surface Mount Surface Mount
Supplier Device Package D2PAK TO-262 TO-262 TO-262 TO-262 TO-262 D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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