IRFSL4610PBF
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Infineon Technologies IRFSL4610PBF

Manufacturer No:
IRFSL4610PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFSL4610PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 73A TO262
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:73A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3550 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Part Number IRFSL4610PBF IRFSL4710PBF   IRFSL4620PBF   IRFSL4615PBF   IRFSL4010PBF   IRFSL4310PBF   IRFSL4410PBF   IRFSL4510PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 200 V 150 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc) 75A (Tc) 24A (Tc) 33A (Tc) 180A (Tc) 130A (Tc) 88A (Tc) 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V 14mOhm @ 45A, 10V 77.5mOhm @ 15A, 10V 42mOhm @ 21A, 10V 4.7mOhm @ 106A, 10V 7mOhm @ 75A, 10V 10mOhm @ 58A, 10V 13.9mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 5.5V @ 250µA 5V @ 100µA 5V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 150µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V 170 nC @ 10 V 38 nC @ 10 V 40 nC @ 10 V 215 nC @ 10 V 250 nC @ 10 V 180 nC @ 10 V 87 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 50 V 6160 pF @ 25 V 1710 pF @ 50 V 1750 pF @ 50 V 9575 pF @ 50 V 7670 pF @ 50 V 5150 pF @ 50 V 3180 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 190W (Tc) 3.8W (Ta), 200W (Tc) 144W (Tc) 144W (Tc) 375W (Tc) 300W (Tc) 200W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-262 TO-262 TO-262 TO-262 TO-262 TO-262 TO-262 TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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