IRFSL4410PBF
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Infineon Technologies IRFSL4410PBF

Manufacturer No:
IRFSL4410PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFSL4410PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 88A TO262
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:88A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 58A, 10V
Vgs(th) (Max) @ Id:4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5150 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IRFSL4410PBF IRFSL4410ZPBF   IRFSL4610PBF   IRFSL4710PBF   IRFSL4510PBF   IRFSL4010PBF   IRFSL4310PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs Obsolete Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 88A (Tc) 97A (Tc) 73A (Tc) 75A (Tc) 61A (Tc) 180A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 58A, 10V 9mOhm @ 58A, 10V 14mOhm @ 44A, 10V 14mOhm @ 45A, 10V 13.9mOhm @ 37A, 10V 4.7mOhm @ 106A, 10V 7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA 4V @ 150µA 4V @ 100µA 5.5V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 120 nC @ 10 V 140 nC @ 10 V 170 nC @ 10 V 87 nC @ 10 V 215 nC @ 10 V 250 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5150 pF @ 50 V 4820 pF @ 50 V 3550 pF @ 50 V 6160 pF @ 25 V 3180 pF @ 50 V 9575 pF @ 50 V 7670 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 200W (Tc) 230W (Tc) 190W (Tc) 3.8W (Ta), 200W (Tc) 140W (Tc) 375W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-262 TO-262 TO-262 TO-262 TO-262 TO-262 TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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