IRFSL3107PBF
  • Share:

Infineon Technologies IRFSL3107PBF

Manufacturer No:
IRFSL3107PBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRFSL3107PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 195A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:240 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9370 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):370W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$2.51
197

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFSL3107PBF IRFSL3607PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Last Time Buy Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 140A, 10V 9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9370 pF @ 50 V 3070 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 370W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-262 TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

HUF76121D3S
HUF76121D3S
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
FDP10AN06A0
FDP10AN06A0
Fairchild Semiconductor
MOSFET N-CH 60V 12A/75A TO220-3
FQB6N60TM
FQB6N60TM
Fairchild Semiconductor
MOSFET N-CH 600V 6.2A D2PAK
FQPF32N12V2
FQPF32N12V2
Fairchild Semiconductor
MOSFET N-CH 120V 32A TO220F
SSM3J374R,LF
SSM3J374R,LF
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 4A SOT23F
BSZ110N06NS3GATMA1
BSZ110N06NS3GATMA1
Infineon Technologies
MOSFET N-CH 60V 20A 8TSDSON
STD12N60DM2AG
STD12N60DM2AG
STMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 600 V
IRLR7833TRL
IRLR7833TRL
Infineon Technologies
MOSFET N-CH 30V 140A DPAK
FDS5170N7
FDS5170N7
onsemi
MOSFET N-CH 60V 10.6A 8SO
NTP18N06LG
NTP18N06LG
onsemi
MOSFET N-CH 60V 15A TO220AB
SI4829DY-T1-E3
SI4829DY-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 2A 8SO
RHP020N06T100
RHP020N06T100
Rohm Semiconductor
MOSFET N-CH 60V 2A MPT3

Related Product By Brand

D251K14BXPSA1
D251K14BXPSA1
Infineon Technologies
DIODE GEN PURP 1.4KV 255A
BCR 133 B6327
BCR 133 B6327
Infineon Technologies
TRANS PREBIAS NPN 200MW SOT23-3
IRGS8B60KPBF
IRGS8B60KPBF
Infineon Technologies
IRGS8B60 - DISCRETE IGBT WITHOUT
XC161CJ16F40FBBKXUMA1
XC161CJ16F40FBBKXUMA1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 144TQFP
TC222S12F133FABKXQ MA1
TC222S12F133FABKXQ MA1
Infineon Technologies
IC MICROCONTROLLER
ICE2PCS05G
ICE2PCS05G
Infineon Technologies
ICE2PCS05 - PFC-CCM (CONTINUOUS
SK-FM4-176L-S6E2CC-ETH
SK-FM4-176L-S6E2CC-ETH
Infineon Technologies
S6E2CCA EVAL BRD
CY25404ZXI217T
CY25404ZXI217T
Infineon Technologies
TSBU
CYIFS784BSXCT
CYIFS784BSXCT
Infineon Technologies
IC CLOCK SS LOW EMI 8-SOIC
CY9BF467RBGL-GK7E1
CY9BF467RBGL-GK7E1
Infineon Technologies
IC MCU 32BIT 800KB FLASH 144FBGA
S29GL064S80DHIV10
S29GL064S80DHIV10
Infineon Technologies
IC FLASH 64MBIT PARALLEL 64FBGA
CY7C1382KV33-167AXC
CY7C1382KV33-167AXC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 100TQFP