IRFS7530PBF
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Infineon Technologies IRFS7530PBF

Manufacturer No:
IRFS7530PBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRFS7530PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 195A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:411 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13703 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRFS7530PBF IRFSL7530PBF   IRFS7534PBF   IRFS7537PBF   IRFS7540PBF   IRFS7730PBF   IRFS7430PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Not For New Designs Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 75 V 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 195A (Tc) 195A (Tc) 173A (Tc) 110A (Tc) 195A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V 2mOhm @ 100A, 10V 2.4mOhm @ 100A, 10V 3.3mOhm @ 100A, 10V 5.1mOhm @ 65A, 10V 2.6mOhm @ 100A, 10V 1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA 3.7V @ 250µA 3.7V @ 250µA 3.7V @ 150µA 3.7V @ 100µA 3.7V @ 250µA 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 411 nC @ 10 V 411 nC @ 10 V 279 nC @ 10 V 210 nC @ 10 V 130 nC @ 10 V 407 nC @ 10 V 460 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13703 pF @ 25 V 13703 pF @ 25 V 10034 pF @ 25 V 7020 pF @ 25 V 4555 pF @ 25 V 13660 pF @ 25 V 14240 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 375W (Tc) 375W (Tc) 294W (Tc) 230W (Tc) 160W (Tc) 375W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK TO-262 D2PAK D2PAK D2PAK D²PAK (TO-263AB) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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