IRFS7430PBF
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Infineon Technologies IRFS7430PBF

Manufacturer No:
IRFS7430PBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRFS7430PBF Datasheet
ECAD Model:
-
Description:
TRENCH <= 40V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:460 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14240 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRFS7430PBF IRFSL7430PBF   IRFS7437PBF   IRFS7440PBF   IRFS7530PBF   IRFS7434PBF   IRFS7730PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 60 V 40 V 75 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 195A (Tc) 195A (Tc) 120A (Tc) 195A (Tc) 195A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 100A, 10V 1.2mOhm @ 100A, 10V 1.8mOhm @ 100A, 10V 2.5mOhm @ 100A, 10V 2mOhm @ 100A, 10V 1.6mOhm @ 100A, 10V 2.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA 3.9V @ 250µA 3.9V @ 150µA 3.9V @ 100µA 3.7V @ 250µA 3.9V @ 250µA 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 460 nC @ 10 V 460 nC @ 10 V 225 nC @ 10 V 135 nC @ 10 V 411 nC @ 10 V 324 nC @ 10 V 407 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 14240 pF @ 25 V 14240 pF @ 25 V 7330 pF @ 25 V 4730 pF @ 25 V 13703 pF @ 25 V 10820 pF @ 25 V 13660 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 375W (Tc) 375W (Tc) 230W (Tc) 208W (Tc) 375W (Tc) 294W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK PG-TO263-3 TO-263 (D²Pak) D2PAK D2PAK D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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