IRFS4610TRLPBF
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Infineon Technologies IRFS4610TRLPBF

Manufacturer No:
IRFS4610TRLPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRFS4610TRLPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 73A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:73A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3550 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRFS4610TRLPBF IRFS4620TRLPBF   IRFS4615TRLPBF   IRFS4610TRRPBF   IRFS4010TRLPBF   IRFS4310TRLPBF   IRFS4410TRLPBF   IRFS4510TRLPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Obsolete Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V 150 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc) 24A (Tc) 33A (Tc) 73A (Tc) 180A (Tc) 130A (Tc) 88A (Tc) 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V 77.5mOhm @ 15A, 10V 42mOhm @ 21A, 10V 14mOhm @ 44A, 10V 4.7mOhm @ 106A, 10V 7mOhm @ 75A, 10V 10mOhm @ 58A, 10V 13.9mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 5V @ 100µA 5V @ 100µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 150µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V 38 nC @ 10 V 40 nC @ 10 V 140 nC @ 10 V 215 nC @ 10 V 250 nC @ 10 V 180 nC @ 10 V 87 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 50 V 1710 pF @ 50 V 1750 pF @ 50 V 3550 pF @ 50 V 9575 pF @ 50 V 7670 pF @ 50 V 5150 pF @ 50 V 3180 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 190W (Tc) 144W (Tc) 144W (Tc) 190W (Tc) 375W (Tc) 300W (Tc) 200W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK PG-TO263-3 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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