IRFS4610PBF
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Infineon Technologies IRFS4610PBF

Manufacturer No:
IRFS4610PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFS4610PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 73A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:73A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3550 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRFS4610PBF IRFS4710PBF   IRFS4620PBF   IRFS4615PBF   IRFS4010PBF   IRFS4310PBF   IRFS4410PBF   IRFS4510PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 200 V 150 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc) 75A (Tc) 24A (Tc) 33A (Tc) 180A (Tc) 130A (Tc) 88A (Tc) 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V 14mOhm @ 45A, 10V 77.5mOhm @ 15A, 10V 42mOhm @ 21A, 10V 4.7mOhm @ 106A, 10V 7mOhm @ 75A, 10V 10mOhm @ 58A, 10V 13.9mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 5.5V @ 250µA 5V @ 100µA 5V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 150µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V 170 nC @ 10 V 38 nC @ 10 V 40 nC @ 10 V 215 nC @ 10 V 250 nC @ 10 V 180 nC @ 10 V 87 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 50 V 6160 pF @ 25 V 1710 pF @ 50 V 1750 pF @ 50 V 9575 pF @ 50 V 7670 pF @ 50 V 5150 pF @ 50 V 3180 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 190W (Tc) 3.8W (Ta), 200W (Tc) 144W (Tc) 144W (Tc) 375W (Tc) 300W (Tc) 200W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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