IRFS4610PBF
  • Share:

Infineon Technologies IRFS4610PBF

Manufacturer No:
IRFS4610PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFS4610PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 73A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:73A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3550 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
352

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFS4610PBF IRFS4710PBF   IRFS4620PBF   IRFS4615PBF   IRFS4010PBF   IRFS4310PBF   IRFS4410PBF   IRFS4510PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 200 V 150 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc) 75A (Tc) 24A (Tc) 33A (Tc) 180A (Tc) 130A (Tc) 88A (Tc) 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V 14mOhm @ 45A, 10V 77.5mOhm @ 15A, 10V 42mOhm @ 21A, 10V 4.7mOhm @ 106A, 10V 7mOhm @ 75A, 10V 10mOhm @ 58A, 10V 13.9mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 5.5V @ 250µA 5V @ 100µA 5V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 150µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V 170 nC @ 10 V 38 nC @ 10 V 40 nC @ 10 V 215 nC @ 10 V 250 nC @ 10 V 180 nC @ 10 V 87 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 50 V 6160 pF @ 25 V 1710 pF @ 50 V 1750 pF @ 50 V 9575 pF @ 50 V 7670 pF @ 50 V 5150 pF @ 50 V 3180 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 190W (Tc) 3.8W (Ta), 200W (Tc) 144W (Tc) 144W (Tc) 375W (Tc) 300W (Tc) 200W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

TSM7ND60CI
TSM7ND60CI
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 7A ITO220
NDTL01N60ZT1G
NDTL01N60ZT1G
Fairchild Semiconductor
MOSFET N-CH 600V 250MA SOT223
CSD13202Q2
CSD13202Q2
Texas Instruments
MOSFET N-CH 12V 22A 6WSON
SI3440ADV-T1-GE3
SI3440ADV-T1-GE3
Vishay Siliconix
MOSFET N-CH 150V 2.2A 6TSOP
PXP9R1-30QLJ
PXP9R1-30QLJ
Nexperia USA Inc.
PXP9R1-30QL/SOT8002/MLPAK33
IXTY1R4N120P
IXTY1R4N120P
IXYS
MOSFET N-CH 1200V 1.4A TO252
DMN10H220L-13
DMN10H220L-13
Diodes Incorporated
MOSFET N-CH 100V 1.4A SOT23
APTM20SKM04G
APTM20SKM04G
Microchip Technology
MOSFET N-CH 200V 372A SP6
STB80NF55-08-1
STB80NF55-08-1
STMicroelectronics
MOSFET N-CH 55V 80A I2PAK
IPD5N03LAG
IPD5N03LAG
Infineon Technologies
MOSFET N-CH 25V 50A TO252-3
IPD50R380CEATMA1
IPD50R380CEATMA1
Infineon Technologies
MOSFET N-CH 500V 14.1A TO252-3
IPP086N10N3GHKSA1
IPP086N10N3GHKSA1
Infineon Technologies
MOSFET N-CH 100V 80A TO220-3

Related Product By Brand

ND350N12KHPSA1
ND350N12KHPSA1
Infineon Technologies
DIODE GP 1.2KV 350A BG-PB50ND-1
BC857SE6433HTMA1
BC857SE6433HTMA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
IRF7311TRPBF
IRF7311TRPBF
Infineon Technologies
MOSFET 2N-CH 20V 6.6A 8-SOIC
IPB240N03S4LR9ATMA1
IPB240N03S4LR9ATMA1
Infineon Technologies
MOSFET N-CH 30V 240A TO263-7
IKW15N120BH6XKSA1
IKW15N120BH6XKSA1
Infineon Technologies
IGBT 1200 V 15A TO247-3-46
BTS133TCBUMA1
BTS133TCBUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO263-3
MB90591GHPF-G-191-JNERE1
MB90591GHPF-G-191-JNERE1
Infineon Technologies
IC MCU 16BIT 384KB MROM 100QFP
MB90022PF-GS-113-BNDE1
MB90022PF-GS-113-BNDE1
Infineon Technologies
IC MCU 16BIT 100QFP
MB90387PMT-G-210-JNE1
MB90387PMT-G-210-JNE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 48LQFP
MB90548GSPFV-G-378E1
MB90548GSPFV-G-378E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB91F467SAPMC-C0043
MB91F467SAPMC-C0043
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 176LQFP
S34SL04G200BHI000
S34SL04G200BHI000
Infineon Technologies
IC FLASH 4GBIT PARALLEL 63BGA