IRFS4410PBF
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Infineon Technologies IRFS4410PBF

Manufacturer No:
IRFS4410PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFS4410PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 88A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:88A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 58A, 10V
Vgs(th) (Max) @ Id:4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5150 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRFS4410PBF IRFS4610PBF   IRFS4710PBF   IRFS4410ZPBF   IRFS4510PBF   IRFS4010PBF   IRFS4310PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 88A (Tc) 73A (Tc) 75A (Tc) 97A (Tc) 61A (Tc) 180A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 58A, 10V 14mOhm @ 44A, 10V 14mOhm @ 45A, 10V 9mOhm @ 58A, 10V 13.9mOhm @ 37A, 10V 4.7mOhm @ 106A, 10V 7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA 4V @ 100µA 5.5V @ 250µA 4V @ 150µA 4V @ 100µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 140 nC @ 10 V 170 nC @ 10 V 120 nC @ 10 V 87 nC @ 10 V 215 nC @ 10 V 250 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5150 pF @ 50 V 3550 pF @ 50 V 6160 pF @ 25 V 4820 pF @ 50 V 3180 pF @ 50 V 9575 pF @ 50 V 7670 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 200W (Tc) 190W (Tc) 3.8W (Ta), 200W (Tc) 230W (Tc) 140W (Tc) 375W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK PG-TO263-3 D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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