IRFS4310ZPBF
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Infineon Technologies IRFS4310ZPBF

Manufacturer No:
IRFS4310ZPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFS4310ZPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 120A D2PAK
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6860 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRFS4310ZPBF IRFS4410ZPBF   IRFS4310PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 97A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 75A, 10V 9mOhm @ 58A, 10V 7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA 4V @ 150µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 120 nC @ 10 V 250 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6860 pF @ 50 V 4820 pF @ 50 V 7670 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 230W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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