IRFS4310TRLPBF
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Infineon Technologies IRFS4310TRLPBF

Manufacturer No:
IRFS4310TRLPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRFS4310TRLPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 130A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7670 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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$5.47
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Similar Products

Part Number IRFS4310TRLPBF IRFS4310ZTRLPBF   IRFS4510TRLPBF   IRFS4610TRLPBF   IRFS4410TRLPBF   IRFS4310TRRPBF   IRFS4010TRLPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 120A (Tc) 61A (Tc) 73A (Tc) 88A (Tc) 130A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 75A, 10V 6mOhm @ 75A, 10V 13.9mOhm @ 37A, 10V 14mOhm @ 44A, 10V 10mOhm @ 58A, 10V 7mOhm @ 75A, 10V 4.7mOhm @ 106A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 150µA 4V @ 100µA 4V @ 100µA 4V @ 150µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V 170 nC @ 10 V 87 nC @ 10 V 140 nC @ 10 V 180 nC @ 10 V 250 nC @ 10 V 215 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 50 V 6860 pF @ 50 V 3180 pF @ 50 V 3550 pF @ 50 V 5150 pF @ 50 V 7670 pF @ 50 V 9575 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 300W (Tc) 250W (Tc) 140W (Tc) 190W (Tc) 200W (Tc) 300W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK PG-TO263-3 D2PAK PG-TO263-3 D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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