IRFS4010PBF
  • Share:

Infineon Technologies IRFS4010PBF

Manufacturer No:
IRFS4010PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFS4010PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 180A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 106A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:215 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9575 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
482

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFS4010PBF IRFS4610PBF   IRFS4710PBF   IRFS4410PBF   IRFS4310PBF   IRFS4020PBF   IRFS4510PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Obsolete Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 73A (Tc) 75A (Tc) 88A (Tc) 130A (Tc) 18A (Tc) 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 106A, 10V 14mOhm @ 44A, 10V 14mOhm @ 45A, 10V 10mOhm @ 58A, 10V 7mOhm @ 75A, 10V 105mOhm @ 11A, 10V 13.9mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 100µA 5.5V @ 250µA 4V @ 150µA 4V @ 250µA 4.9V @ 100µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 215 nC @ 10 V 140 nC @ 10 V 170 nC @ 10 V 180 nC @ 10 V 250 nC @ 10 V 29 nC @ 10 V 87 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9575 pF @ 50 V 3550 pF @ 50 V 6160 pF @ 25 V 5150 pF @ 50 V 7670 pF @ 50 V 1200 pF @ 50 V 3180 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 375W (Tc) 190W (Tc) 3.8W (Ta), 200W (Tc) 200W (Tc) 300W (Tc) 100W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

NDB6030PL
NDB6030PL
Fairchild Semiconductor
30A, 30V, 0.025OHM, P-CHANNEL,
IPW65R019C7FKSA1
IPW65R019C7FKSA1
Infineon Technologies
MOSFET N-CH 650V 75A TO247-3
SSM3K347R,LF
SSM3K347R,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 38V 2A SOT23F
VN3205N3-G
VN3205N3-G
Microchip Technology
MOSFET N-CH 50V 1.2A TO92-3
LND250K1-G
LND250K1-G
Microchip Technology
MOSFET N-CH 500V 13MA SOT23
IRFR320PBF
IRFR320PBF
Vishay Siliconix
MOSFET N-CH 400V 3.1A DPAK
IXTH1N250
IXTH1N250
IXYS
MOSFET N-CH 2500V 1.5A TO-247AD
SIHFR320-GE3
SIHFR320-GE3
Vishay Siliconix
MOSFET N-CH 400V 3.1A DPAK
SIHD2N80AE-GE3
SIHD2N80AE-GE3
Vishay Siliconix
MOSFET N-CH 800V 2.9A DPAK
AUIRF4905S
AUIRF4905S
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
YJB200G06B-F2-0000HF
YJB200G06B-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 200A TO-263
STP16N50M2
STP16N50M2
STMicroelectronics
MOSFET N-CH 500V 13A TO220

Related Product By Brand

IDW16G65C5XKSA1
IDW16G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 16A TO247-3
IPP60R022S7XKSA1
IPP60R022S7XKSA1
Infineon Technologies
MOSFET N-CH 600V 23A TO220-3
BSS205NH6327XTSA1
BSS205NH6327XTSA1
Infineon Technologies
MOSFET N-CH 20V 2.5A SOT23-3
IPP120N06S402AKSA2
IPP120N06S402AKSA2
Infineon Technologies
MOSFET N-CH 60V 120A TO220-3
IR25602SPBF-INF
IR25602SPBF-INF
Infineon Technologies
IR25602 - HALF-BRIDGE DRIVER
TLE4275S
TLE4275S
Infineon Technologies
IC REG LIN 5V 450MA TO220-5-12
FM0-100L-S6E1B8
FM0-100L-S6E1B8
Infineon Technologies
S6E1B8 EVAL BRD
CY9AF111LPMC-G-MJE1
CY9AF111LPMC-G-MJE1
Infineon Technologies
IC MCU 32BIT LQFP
MB89935BPFV-GS-284-BND
MB89935BPFV-GS-284-BND
Infineon Technologies
IC MCU 8BIT 16KB MROM 30SSOP
CY62146GN-45ZSXI
CY62146GN-45ZSXI
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II
CY7C1312BV18-200BZI
CY7C1312BV18-200BZI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
S25FL128P0XNFI003M
S25FL128P0XNFI003M
Infineon Technologies
IC FLSH 128MBIT SPI 104MHZ 8WSON