IRFS3507
  • Share:

Infineon Technologies IRFS3507

Manufacturer No:
IRFS3507
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFS3507 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 97A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:97A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.8mOhm @ 58A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3540 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
135

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFS3507 IRFS350A   IRFS3307  
Manufacturer Infineon Technologies Fairchild Semiconductor Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 400 V 75 V
Current - Continuous Drain (Id) @ 25°C 97A (Tc) 11.5A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 58A, 10V 300mOhm @ 5.75A, 10V 6.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 250µA 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 131 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3540 pF @ 50 V 2780 pF @ 25 V 5150 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 190W (Tc) 92W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole Surface Mount
Supplier Device Package D2PAK TO-3PF D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3P-3 Full Pack TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRF5210PBF
IRF5210PBF
Infineon Technologies
MOSFET P-CH 100V 40A TO220AB
FDP7030L
FDP7030L
Fairchild Semiconductor
MOSFET N-CH 30V 80A TO220-3
DMT2004UFDF-7
DMT2004UFDF-7
Diodes Incorporated
MOSFET N-CH 24V 14.1A 6UDFN
FCPF190N60
FCPF190N60
onsemi
MOSFET N-CH 600V 20.2A TO220F
SIHG11N80AE-GE3
SIHG11N80AE-GE3
Vishay Siliconix
MOSFET N-CH 800V 8A TO247AC
HAF1009-90STL
HAF1009-90STL
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
FQD5N60CTM-WS
FQD5N60CTM-WS
onsemi
MOSFET N-CH 600V 2.8A DPAK
BUK762R0-40C,118
BUK762R0-40C,118
NXP Semiconductors
NEXPERIA BUK762 - N-CHANNEL MOSF
IPP80N06S2-09
IPP80N06S2-09
Infineon Technologies
IPP80N06 - 55V-60V N-CHANNEL AUT
SPD03N50C3BTMA1
SPD03N50C3BTMA1
Infineon Technologies
MOSFET N-CH 560V 3.2A TO252-3
SPB80N10L
SPB80N10L
Infineon Technologies
MOSFET N-CH 100V 80A TO263-3
TPC8014(TE12L,Q,M)
TPC8014(TE12L,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 11A 8SOP

Related Product By Brand

IDD05SG60CXTMA1
IDD05SG60CXTMA1
Infineon Technologies
DIODE SCHOTTKY 600V 5A TO252-3
BC 808-40W H6327
BC 808-40W H6327
Infineon Technologies
TRANS PNP 25V 0.5A SOT323
IPD60R360CFD7ATMA1
IPD60R360CFD7ATMA1
Infineon Technologies
MOSFET N-CH 650V 7A TO252-3-313
IRF7240TRPBF
IRF7240TRPBF
Infineon Technologies
MOSFET P-CH 40V 10.5A 8SO
IRG4PC30KDPBF
IRG4PC30KDPBF
Infineon Technologies
IGBT 600V 28A 100W TO247AC
PEB2466HV2.2TR
PEB2466HV2.2TR
Infineon Technologies
SICOFI CODEC FILTER
IRS2158DPBF
IRS2158DPBF
Infineon Technologies
IC FLRSCT LAMP CTR 48.3KHZ 16DIP
TLE4928C
TLE4928C
Infineon Technologies
MAGNETIC SWITCH SPEC PURP SSO-3
CY2308SXC-3T
CY2308SXC-3T
Infineon Technologies
IC CLK ZDB 8OUT 133MHZ 16SOIC
CY7C1021DV33-10ZSXI
CY7C1021DV33-10ZSXI
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44TSOP II
S70KL1283DPBHB020
S70KL1283DPBHB020
Infineon Technologies
IC PSRAM 128MBIT SPI/OCTL 24FBGA
CY7C1360S-166AXC
CY7C1360S-166AXC
Infineon Technologies
IC SRAM 9MBIT PARALLEL 100TQFP