IRFR4104PBF
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Infineon Technologies IRFR4104PBF

Manufacturer No:
IRFR4104PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFR4104PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 42A DPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:89 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2950 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRFR4104PBF IRFR4105PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 55 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 42A, 10V 45mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 25 V 700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 140W (Tc) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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