IRFR3711ZCTRPBF
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Infineon Technologies IRFR3711ZCTRPBF

Manufacturer No:
IRFR3711ZCTRPBF
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Datasheet:
IRFR3711ZCTRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 93A DPAK
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:93A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:5.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:2160 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRFR3711ZCTRPBF IRFR3711ZTRPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 93A (Tc) 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 15A, 10V 5.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V 27 nC @ 4.5 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 2160 pF @ 10 V 2160 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 79W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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