IRFR3709Z
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Infineon Technologies IRFR3709Z

Manufacturer No:
IRFR3709Z
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFR3709Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 86A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:86A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2330 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRFR3709Z IRFR3707Z  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 86A (Tc) 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 10V 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 4.5 V 14 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2330 pF @ 15 V 1150 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 79W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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