IRFR3518PBF
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Infineon Technologies IRFR3518PBF

Manufacturer No:
IRFR3518PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFR3518PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 38A DPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:29mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1710 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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Similar Products

Part Number IRFR3518PBF IRFR3418PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 18A, 10V 14mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 94 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 25 V 3510 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 3.8W (Ta), 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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