IRFR3410TRPBF
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Infineon Technologies IRFR3410TRPBF

Manufacturer No:
IRFR3410TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRFR3410TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 31A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:39mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1690 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRFR3410TRPBF IRFR3411TRPBF   IRFR3412TRPBF   IRFR3418TRPBF   IRFR3410TRRPBF   IRFR310TRPBF   IRFR3410TRLPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Active Active Obsolete Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 80 V 100 V 400 V 100 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) 32A (Tc) 48A (Tc) 70A (Tc) 31A (Tc) 1.7A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 18A, 10V 44mOhm @ 16A, 10V 25mOhm @ 29A, 10V 14mOhm @ 18A, 10V 39mOhm @ 18A, 10V 3.6Ohm @ 1A, 10V 39mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5.5V @ 250µA 5.5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 71 nC @ 10 V 89 nC @ 10 V 94 nC @ 10 V 56 nC @ 10 V 12 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1690 pF @ 25 V 1960 pF @ 25 V 3430 pF @ 25 V 3510 pF @ 25 V 1690 pF @ 25 V 170 pF @ 25 V 1690 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 3W (Ta), 110W (Tc) 130W (Tc) 140W (Tc) 3.8W (Ta), 140W (Tc) 3W (Ta), 110W (Tc) 2.5W (Ta), 25W (Tc) 3W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak D-Pak D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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