IRFR3103
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Infineon Technologies IRFR3103

Manufacturer No:
IRFR3103
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFR3103 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 1.7A DPAK
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:170 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 25W (Tc)
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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Similar Products

Part Number IRFR3103 IRFR310  
Manufacturer Infineon Technologies Vishay Siliconix
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta) 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1A, 10V 3.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V 170 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 25W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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