IRFR2405PBF
  • Share:

Infineon Technologies IRFR2405PBF

Manufacturer No:
IRFR2405PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFR2405PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 56A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16mOhm @ 34A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2430 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
388

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFR2405PBF IRFR2407PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 75 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 34A, 10V 26mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2430 pF @ 25 V 2400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

2SK2851TZ-E
2SK2851TZ-E
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
FCP4N60
FCP4N60
onsemi
MOSFET N-CH 600V 3.9A TO220-3
IXTA4N65X2
IXTA4N65X2
IXYS
MOSFET N-CH 650V 4A TO263
DMN2004WK-7
DMN2004WK-7
Diodes Incorporated
MOSFET N-CH 20V 540MA SOT323
SIS890ADN-T1-GE3
SIS890ADN-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 7.6A/24.7A PPAK
NVTFS6H888NLTAG
NVTFS6H888NLTAG
onsemi
MOSFET N-CH 80V 4.9A/14A 8WDFN
ZXMP10A13FTA
ZXMP10A13FTA
Diodes Incorporated
MOSFET P-CH 100V 600MA SOT23-3
CWDM3011P TR13 PBFREE
CWDM3011P TR13 PBFREE
Central Semiconductor Corp
MOSFET P-CH 30V 11A 8SOIC
PJD18N20_L2_00001
PJD18N20_L2_00001
Panjit International Inc.
200V N-CHANNEL ENHANCEMENT MODE
TSM4NB60CH X0G
TSM4NB60CH X0G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 4A TO251
IRL3715ZCLPBF
IRL3715ZCLPBF
Infineon Technologies
MOSFET N-CH 20V 50A TO262
IPP80N03S4L04AKSA1
IPP80N03S4L04AKSA1
Infineon Technologies
MOSFET N-CH 30V 80A TO220-3

Related Product By Brand

BAT1504WH6327XTSA1
BAT1504WH6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 4V 100MW SOT323-3
IPB80N04S4L04ATMA1
IPB80N04S4L04ATMA1
Infineon Technologies
MOSFET N-CH 40V 80A TO263-3
IRFR3303TRPBF
IRFR3303TRPBF
Infineon Technologies
MOSFET N-CH 30V 33A DPAK
AUIRLL014N
AUIRLL014N
Infineon Technologies
MOSFET N-CH 55V 2A SOT-223
SGB20N60ATMA1
SGB20N60ATMA1
Infineon Technologies
IGBT 600V 40A 179W TO263-3
SKW20N60HSFKSA1
SKW20N60HSFKSA1
Infineon Technologies
IGBT 600V 36A 178W TO247-3
IR3084MPBF
IR3084MPBF
Infineon Technologies
IC XPHASE CONTROL 28-MLPQ
IRS27951STRPBF
IRS27951STRPBF
Infineon Technologies
IC REG CTRLR BUCK/HALF-BRG 8SOIC
TLE4262GMXUMA2
TLE4262GMXUMA2
Infineon Technologies
OPTIREG LINEAR
TLE4275G
TLE4275G
Infineon Technologies
FIXED POSITIVE LDO REGULATOR
S70FS01GSAGMFV010
S70FS01GSAGMFV010
Infineon Technologies
IC FLASH 1GBIT SPI/QUAD 16SOIC
CY7C2265XV18-600BZXC
CY7C2265XV18-600BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA