IRFR12N25DPBF
  • Share:

Infineon Technologies IRFR12N25DPBF

Manufacturer No:
IRFR12N25DPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFR12N25DPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 14A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:260mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:810 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):144W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
550

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFR12N25DPBF IRFR12N25DCPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 260mOhm @ 8.4A, 10V 260mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 25 V 810 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 144W (Tc) 144W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

C3M0015065K
C3M0015065K
Wolfspeed, Inc.
SICFET N-CH 650V 120A TO247-4L
AOTF42S60L
AOTF42S60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 39A TO220-3F
STP240N10F7
STP240N10F7
STMicroelectronics
MOSFET N-CH 100V 180A TO220
RM5N800HD
RM5N800HD
Rectron USA
MOSFET N-CHANNEL 800V 5A TO263-2
SPP06N60C3
SPP06N60C3
Infineon Technologies
N-CHANNEL POWER MOSFET
FDP030N06B-F102
FDP030N06B-F102
onsemi
MOSFET N-CH 60V 120A TO220-3
DMP6110SSDQ-13
DMP6110SSDQ-13
Diodes Incorporated
MOSFET P-CHANNEL 60V 7.8A 8SO
DMT10H025LSS-13
DMT10H025LSS-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V SO-8 T&R
VN10KN3-G-P013
VN10KN3-G-P013
Microchip Technology
MOSFET N-CH 60V 310MA TO92-3
IXTA3N110
IXTA3N110
IXYS
MOSFET N-CH 1100V 3A TO263
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
FQB630TM
FQB630TM
onsemi
MOSFET N-CH 200V 9A D2PAK

Related Product By Brand

BA892H6327XTSA1
BA892H6327XTSA1
Infineon Technologies
RF DIODE STANDARD 35V SCD80
BCR 191F E6327
BCR 191F E6327
Infineon Technologies
TRANS PREBIAS PNP 250MW TSFP-3
IPZA60R099P7XKSA1
IPZA60R099P7XKSA1
Infineon Technologies
MOSFET N-CH 600V 31A TO247-4
FF600R12ME4AB11BOSA1
FF600R12ME4AB11BOSA1
Infineon Technologies
IGBT MODULE 1200V 3350W
CY9BF115NPQC-G-JNE2
CY9BF115NPQC-G-JNE2
Infineon Technologies
IC MCU 32BIT 416KB FLASH 100PQFP
MB96F636RBPMC-GSE2
MB96F636RBPMC-GSE2
Infineon Technologies
IC MCU 16BIT 288KB FLASH 80LQFP
MB96F643ABPMC-GSE2
MB96F643ABPMC-GSE2
Infineon Technologies
IC MCU 16BIT 96KB FLASH 100LQFP
CY62128BNLL-70ZAXET
CY62128BNLL-70ZAXET
Infineon Technologies
IC SRAM 1MBIT PARALLEL 32STSOP
CY7C1472BV33-200AXC
CY7C1472BV33-200AXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 100TQFP
CY7C1426JV18-300BZC
CY7C1426JV18-300BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
S29AS008J70TFI040
S29AS008J70TFI040
Infineon Technologies
IC FLASH 8MBIT PARALLEL 48TSOP
IS29GL01GS-11DHV01
IS29GL01GS-11DHV01
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA