IRFR12N25D
  • Share:

Infineon Technologies IRFR12N25D

Manufacturer No:
IRFR12N25D
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFR12N25D Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 14A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:260mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:810 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):144W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
90

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFR12N25D IRFR11N25D  
Manufacturer Infineon Technologies Vishay Siliconix
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 260mOhm @ 8.4A, 10V -
Vgs(th) (Max) @ Id 5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V -
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 144W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STB4NK60ZT4
STB4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A D2PAK
SI7415DN-T1-E3
SI7415DN-T1-E3
Vishay Siliconix
MOSFET P-CH 60V 3.6A PPAK1212-8
SI7116DN-T1-E3
SI7116DN-T1-E3
Vishay Siliconix
MOSFET N-CH 40V 10.5A PPAK1212-8
TK100A06N1,S4X
TK100A06N1,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 100A TO220SIS
TK16A60W5,S4VX
TK16A60W5,S4VX
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 15.8A TO220SIS
IXTA10P15T-TRL
IXTA10P15T-TRL
IXYS
MOSFET P-CH 150V 10A TO263
MIC94030YM4
MIC94030YM4
Micrel Inc.
TINYFET P-CHANNEL MOSFET
IRFR3303TRR
IRFR3303TRR
Infineon Technologies
MOSFET N-CH 30V 33A DPAK
TPC6104(TE85L,F,M)
TPC6104(TE85L,F,M)
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 5.5A VS-6
SUD40N02-08-E3
SUD40N02-08-E3
Vishay Siliconix
MOSFET N-CH 20V 40A TO252
SIS448DN-T1-GE3
SIS448DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 35A PPAK1212-8
BUK752R7-60E,127
BUK752R7-60E,127
NXP USA Inc.
MOSFET N-CH 60V 120A TO220AB

Related Product By Brand

KIT_XMC45_AE4_002
KIT_XMC45_AE4_002
Infineon Technologies
HEXAGON APPL KIT XMC4500 EVAL BD
IDH10S120AKSA1
IDH10S120AKSA1
Infineon Technologies
DIODE SCHOTTKY 1200V 10A TO220-2
FF2MR12KM1HOSA1
FF2MR12KM1HOSA1
Infineon Technologies
MEDIUM POWER 62MM
AUIRLS3034-7TRL
AUIRLS3034-7TRL
Infineon Technologies
MOSFET N-CH 40V 240A D2PAK
DDB6U84N16RRBOSA1
DDB6U84N16RRBOSA1
Infineon Technologies
IGBT MOD 1200V 50A 350W
TLE4284DV26ATMA1
TLE4284DV26ATMA1
Infineon Technologies
IC REG LINEAR 2.6V 1A TO252-3-11
CY2548QC004T
CY2548QC004T
Infineon Technologies
PREMIS SSCG EMI REDUCTION
CY25404ZXI012
CY25404ZXI012
Infineon Technologies
IC CLOCK GENERATOR
S6E2C48J0AGB1000A
S6E2C48J0AGB1000A
Infineon Technologies
IC MCU 32BIT 1MB FLASH 192FBGA
MB90F543GSPF-GS-9016
MB90F543GSPF-GS-9016
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
S25FL064P0XMFA000
S25FL064P0XMFA000
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 16SOIC
S25FL256SAGBHIC03
S25FL256SAGBHIC03
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA