IRFR12N25D
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Infineon Technologies IRFR12N25D

Manufacturer No:
IRFR12N25D
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFR12N25D Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 14A DPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:260mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:810 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):144W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRFR12N25D IRFR11N25D  
Manufacturer Infineon Technologies Vishay Siliconix
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 260mOhm @ 8.4A, 10V -
Vgs(th) (Max) @ Id 5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V -
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 144W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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