IRFPS3810PBF
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Infineon Technologies IRFPS3810PBF

Manufacturer No:
IRFPS3810PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFPS3810PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 170A SUPER247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:390 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6790 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):580W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:SUPER-247™ (TO-274AA)
Package / Case:TO-274AA
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Similar Products

Part Number IRFPS3810PBF IRFPS3815PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 100A, 10V 15mOhm @ 63A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 390 nC @ 10 V 390 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6790 pF @ 25 V 6810 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 580W (Tc) 441W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package SUPER-247™ (TO-274AA) SUPER-247™ (TO-274AA)
Package / Case TO-274AA TO-274AA

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