IRFP4229PBF
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Infineon Technologies IRFP4229PBF

Manufacturer No:
IRFP4229PBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRFP4229PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 44A TO247AC
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:46mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4560 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
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Similar Products

Part Number IRFP4229PBF IRFP4227PBF   IRFP4228PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 200 V 150 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc) 65A (Tc) 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 46mOhm @ 26A, 10V 25mOhm @ 46A, 10V 15.5mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 98 nC @ 10 V 107 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4560 pF @ 25 V 4600 pF @ 25 V 4530 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 310W (Tc) 330W (Tc) 310W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247AC TO-247AC TO-247AC
Package / Case TO-247-3 TO-247-3 TO-247-3

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