IRFP3710PBF
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Infineon Technologies IRFP3710PBF

Manufacturer No:
IRFP3710PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFP3710PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 57A TO247AC
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:57A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:25mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
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Similar Products

Part Number IRFP3710PBF IRFP4710PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 57A (Tc) 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 28A, 10V 14mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V 6160 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AC TO-247AC
Package / Case TO-247-3 TO-247-3

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